? 2007 ixys corporation, all rights reserved ds99825 (04/07) polarvhv tm hiperfet power mosfet v dss = 1200 v i d25 =30a r ds(on) 350 m t rr 300 ns n-channel enhancement mode features z fast recovery diode z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z plus 264 tm package for clip or spring mounting z space savings z high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 3 ma 1200 v v gs(th) v ds = v gs , i d = 1 ma 3.5 6.5 v i gss v gs = 30 v, v ds = 0 v 200 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 3000 a r ds(on) v gs = 10 v, i d = 0.5 i d25 , note 1 350 m symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1200 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c30a i dm t c = 25 c, pulse width limited by t jm 75 a i ar t c = 25 c10a e ar t c = 25 c60mj e as t c = 25 c3j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 15 v/ns t j 150 c, r g = 1 p d t c = 25 c 1250 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c f c mounting force 30..120/7.5...2.7 n/lb weight 10 g IXFB30N120P g = gate d = drain s = source tab = drain plus264 tm (ixfb) (tab) g d s preliminary technical information www..net
ixys reserves the right to change limits, test conditions, and dimensions. IXFB30N120P symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , note 1 13 23 s c iss 22.5 nf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 955 pf c rss 28 pf t d(on) 57 ns t r 60 ns t d(off) 97 ns t f 46 ns q g(on) 310 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 105 nc q gd 137 nc r thjc 0.10 c/w r thcs 0.13 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 30 a i sm repetitive 120 a v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr i f = 25a, -di/dt = 100 a/ s 300 ns q rm v r = 100v 0.9 c i rm 8.0 a plus264 tm (ixfb) outline notes: 1. pulse test, t 300 s, duty cycle d 2 % ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. resistive switching time v gs = 10 v, v ds = 0.5 v dss , i d =0.5 i d25 r g = 1 (external)
? 2007 ixys corporation, all rights reserved IXFB30N120P fig. 1. output characteristics @ 25oc 0 3 6 9 12 15 18 21 24 27 30 012345678910 v ds - volts i d - amperes v gs = 10v 9v 7v 8v 6v fig. 2. extended output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 55 60 65 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 9v 7v 6v 8v fig. 3. output characteristics @ 125oc 0 3 6 9 12 15 18 21 24 27 30 0 2 4 6 8 10 12 14 16 18 20 22 v ds - volts i d - amperes v gs = 10v 9v 8v 5v 7v 6v fig. 4. r ds(on) normalized to i d = 15a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -50-25 0 25 50 75100125150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 30a i d = 15a fig. 5. r ds(on) normalized to i d = 15a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0 10203040506070 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 5 10 15 20 25 30 35 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFB30N120P fig. 7. input admittance 0 5 10 15 20 25 30 4.5 5 5.5 6 6.5 7 7.5 8 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 80 90 0.30.40.50.60.70.80.9 1 1.11.21.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 450 q g - nanocoulombs v gs - volts v ds = 600v i d = 15a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref: f_30n120p (97) 4-05-07.xls
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